Researchers enhance performance of hafnia-based memory devices by doping ferroelectric materials with aluminum

A research team has significantly enhanced the data storage capacity of ferroelectric memory devices. By utilizing hafnia-based ferroelectric materials and an innovative device structure, their findings, published on June 7 in the journal Science Advances, mark a substantial advancement in memory technology. The team was led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology (POSTECH).

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