A new method to control the spin current and moment rotation in antiferromagnetic insulators

Antiferromagnetic materials, materials in which atoms are arranged so that all neighboring atoms are anti-parallel (i.e., pointing in the opposite direction) to them, can have several advantageous properties for the development of devices. Due to their fast spin dynamics and negligible stray fields, they could be particularly favorable for creating high-speed memory devices with a lot of storage capacity and low power consumption.

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